Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architectures.

We describe the DRAM-like approach towards a non-volatile magnetoresistive memory integrating magnetic and semiconductor devices into one cell. The sp eed at which the magnetic memory signal can be read depends on many factors . An important factor is the magnetic element itself, the size, magnetic ch aracteristics and absolute resistance. Secondly, the design of the read-out electronics is a key issue. A third determining factor is the technology i n which the electronics are fabricated. Some features are indicated that ar e essential in optimizing MRAM in future.