Demonstration of a four state sensing scheme for a single pseudo-spin valve GMR bit

Authors
Zhang, RL Hassoun, MM Black, WC Das, B Wong, KA
Citation
Rl. Zhang et al., Demonstration of a four state sensing scheme for a single pseudo-spin valve GMR bit, IEEE MAGNET, 35(5), 1999, pp. 2829-2831
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON MAGNETICS
ISSN journal
00189464 → ACNP
Volume
35
Issue
5
Year of publication
1999
Part
1
Pages
2829 - 2831
Database
ISI
SICI code
0018-9464(199909)35:5<2829:DOAFSS>2.0.ZU;2-C
Abstract
A simple and fast method for sensing four states from a single Pseudo-Spin Valve GMR device is presented. Four state sensing shows promise of doubling the potential bit density of Magnetic Random Access Memory (MRAM) and rela ted devices. A new two step method to detect the GMR bit information has be en developed here that is simple to implement and which easily allows for c ompensation of rapid self-heating effects.