Stability of dual synthetic spin valve devices

Citation
X. Yan et al., Stability of dual synthetic spin valve devices, IEEE MAGNET, 35(5), 1999, pp. 2877-2879
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON MAGNETICS
ISSN journal
00189464 → ACNP
Volume
35
Issue
5
Year of publication
1999
Part
1
Pages
2877 - 2879
Database
ISI
SICI code
0018-9464(199909)35:5<2877:SODSSV>2.0.ZU;2-7
Abstract
Magnetic field sensitivity of IrMn-based synthetically pinned dual spin val ve structures was studied using quasi-static testing (QST). The dual synthe tic spin valve structure was demonstrated to have inherent advantages in te rms of high sensitivity to magnetic field and robust low asymmetry against changing bias current and elevated temperatures. In addition, the diamond l ike carbon coated devices demonstrate that there are no measurable changes in either resistance or QST amplitude after 3 days annealing at 120 degree C.