Anisotropy effect of magnetoresistance in spin polarized tunneling

Authors
Chang, CR Chen, SP
Citation
Cr. Chang et Sp. Chen, Anisotropy effect of magnetoresistance in spin polarized tunneling, IEEE MAGNET, 35(5), 1999, pp. 2913-2915
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON MAGNETICS
ISSN journal
00189464 → ACNP
Volume
35
Issue
5
Year of publication
1999
Part
1
Pages
2913 - 2915
Database
ISI
SICI code
0018-9464(199909)35:5<2913:AEOMIS>2.0.ZU;2-S
Abstract
We calculate the influence of single-ion anisotropy in spin polarized tunne ling and conclude that the tunneling magnetoresistance ratio increases for lower barrier height with the increasing anisotropy parameter. In particula r, the optimal alignment of the ferromagnetic layers, yielding the largest TMR ratio is proposed.