Dependence of tunneling magnetoresistance on CoFe interfacial layer thickness in NiFe/Al2O3/NiFe tunnel junctions

Authors
Park, BG Lee, TD
Citation
Bg. Park et Td. Lee, Dependence of tunneling magnetoresistance on CoFe interfacial layer thickness in NiFe/Al2O3/NiFe tunnel junctions, IEEE MAGNET, 35(5), 1999, pp. 2919-2921
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON MAGNETICS
ISSN journal
00189464 → ACNP
Volume
35
Issue
5
Year of publication
1999
Part
1
Pages
2919 - 2921
Database
ISI
SICI code
0018-9464(199909)35:5<2919:DOTMOC>2.0.ZU;2-Q
Abstract
Magnetic tunnel junctions of Ta/Ni-81/Fe-19/Fe50Mn50/Ni81Fe19/Co50Fe50/Al2O 3/Co50Fe50/Ni81Fe19 were fabricated by a magnetron sputtering system. We ha ve studied the change of tunneling magnetoresistance(MR) ratio and junction resistance as a function of CoFe interfacial layer thickness. The MR ratio rapidly increased and slowly decreased as the CoFe layer thickness increas ed. The junction resistance increased with the introduction of CoFe layer. The increase is due to more uniform Al layer formation on a CoFe layer than a NiFe layer.