Spin-Valve films using synthetic ferrimagnets for pinned layer

Citation
K. Meguro et al., Spin-Valve films using synthetic ferrimagnets for pinned layer, IEEE MAGNET, 35(5), 1999, pp. 2925-2927
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON MAGNETICS
ISSN journal
00189464 → ACNP
Volume
35
Issue
5
Year of publication
1999
Part
1
Pages
2925 - 2927
Database
ISI
SICI code
0018-9464(199909)35:5<2925:SFUSFF>2.0.ZU;2-K
Abstract
The magnetic behavior of spin-valve films using Co(t(1))/Ru(0.8 nm)/Co(t(2) ) synthetic ferrimagnets for the pinned layer were investigated, in which t he Co(t(2)) layer is exchange-biased by a CrMnPt antiferromagnetic layer. A s compared with experimental results, the magnetic behavior of Co/Ru/Co/CrM nPt films could be qualitatively explained on the basis of a coherent rotat ion model and was roughly classified into two cases according to the thickn ess of t(1) and t(2). For t(1) = t(2) the magnetization of the two Co layer s changed the direction only in gentle rotation mode, which resulted in ver y large pinning fields. For t(1) not equal t(2) the direction of the magnet ization of the two Co layers rapidly reversed, maintaining an antiparallel magnetic configuration, at a relatively small applied field. The field wher e the rapid magnetization reversal was caused agreed with the exchange-bias field in the spin-valve film with a single Co pinned layer whose thickness was t(1) - t(2).