In-situ characterization of oxide growth for fabricating spin-dependent tunnel junctions

Ni45Fe55/Al2O3/Ni45Fe55 spin dependent tunneling junctions with an MR ratio of similar to 16.5 % have been fabricated, The Al2O3 barriers are formed b y plasma oxidation, and the oxide growth is characterized by in-situ resist ive measurements. The oxide barrier growth mode is greatly affected by proc ess parameters, including shutter configuration, gas composition, and plasm a power, The changes in oxide thickness can be modeled by a combination of the linear growth law and the generalized Mott-Cabrera law.