Effect of Ag buffer layer to ultrathin Co films on Si(111) surface

Citation
Js. Tsay et al., Effect of Ag buffer layer to ultrathin Co films on Si(111) surface, IEEE MAGNET, 35(5), 1999, pp. 3028-3030
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON MAGNETICS
ISSN journal
00189464 → ACNP
Volume
35
Issue
5
Year of publication
1999
Part
1
Pages
3028 - 3030
Database
ISI
SICI code
0018-9464(199909)35:5<3028:EOABLT>2.0.ZU;2-X
Abstract
The magnetic properties of ultrathin Co/Ag/Si(111) films were studied by su rface magneto-optic Kerr effect. A magnetic phase diagram for binary-metal Co/Ag films deposited on Si(111) surfaces has been successfully established . The phase diagram can be divided into four regions: nonferromagnetic Co-S i compound; low Curie temperature Co film; canted out-of-plane anisotropy; in-plane anisotropy. The ferromagnetic inactive layers at the Co/Si interfa ce are formed due to intermixing of Co and Si; and can be efficiently reduc ed by the Ag buffer layer. We have demonstrated that the inactive layer thi ckness is reduced from 2.1ML for Co/Si(111), to 1.0 for Co/2.8MLAg/Si(111), and 0.0 for Co/5.6MLAg/Si(111).