Comparison of radiation damage in silicon induced by proton and neutron irradiation

The subject of radiation damage to silicon detectors induced by 24-GeV/c pr otons and nuclear reactor neutrons has been studied. Detectors fabricated o n single-crystal silicon enriched with various impurities have been tested, Significant differences in electrically active defects have been found bet ween the various types of material. The results of the study suggest for th e first time that the widely used nonionizing energy loss (NIEL) factors ar e insufficient for normalization of the electrically active damage in case of oxygen- and carbon-enriched silicon detectors. It has been found that a deliberate introduction of impurities into the semiconductor can affect the radiation hardness of silicon detectors.