Physicochemical aspects of adhesion of thin MSb (M = In, Ga, Cd) layers

An oxide-assisted mechanism of adhesion between thin MSb (M = In, Ga, Cd) l ayers grown by directional solidification and dielectric substrates is prop osed based on experimental data (sessile-drop method, gravimetry, and Auger electron spectroscopy) and theoretical considerations. A eutectic nucleati on mechanism restricting the maximal supercooling in thin InSb and GaSb mel t layers is suggested. The formation of intermediate layers at the MSb/insu lator interface has little or no effect on the solidification behavior and electrical properties of the semiconductor.