Thermochemical stability of covalent and ionic inorganic compounds: Graphite-like structures, compound semiconductors, and High-T-c oxides

Authors
Citation
Vp. Sanygin, Thermochemical stability of covalent and ionic inorganic compounds: Graphite-like structures, compound semiconductors, and High-T-c oxides, INORG MATER, 35(10), 1999, pp. 1031-1046
Citations number
56
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685 → ACNP
Volume
35
Issue
10
Year of publication
1999
Pages
1031 - 1046
Database
ISI
SICI code
0020-1685(199910)35:10<1031:TSOCAI>2.0.ZU;2-Q
Abstract
Based on the idea that there is a distinct boundary between structures with directed and nondirected bonding, two radically different approaches were proposed to calculating the standard enthalpies of formation of molecules a nd crystals of predominantly covalent and predominantly ionic substances-on e relying on the additivity principle, and the other on the energy-ratio me thod. These approaches were used to assess the thermochemical stability of alkali halides, high-T-c oxides, II-V and III-V semiconductors, and carbon nanostructures (fullerenes, nanotubes, capsulenes, and toroids). The result s agree well with the available experimental data.