TWINNING STRUCTURE AND GROWTH HILLOCK ON DIAMOND (001) EPITAXIAL FILM

Citation
T. Tsuno et al., TWINNING STRUCTURE AND GROWTH HILLOCK ON DIAMOND (001) EPITAXIAL FILM, JPN J A P 1, 33(7A), 1994, pp. 4039-4043
Citations number
20
Categorie Soggetti
Physics, Applied
Volume
33
Issue
7A
Year of publication
1994
Pages
4039 - 4043
Database
ISI
SICI code
Abstract
Surface observation was carried out for diamond homoepitaxial films gr own on (001) substrates. Nonepitaxial crystallites and growth hillocks were observed on the films. The majority of the nonepitaxial crystall ites were found to be {111} penetration twins, which were considered t o originate from the twin nucleation on {111} facet on substrates or e pitaxial films. The penetration twins in the configuration of 4-fold s ymmetry were also observed and they are attributed to the twin nucleat ion in etch pits on the surface. On the top of the pyramidlike growth hillock, the twinning structure with a pair of parallel {111} twinning planes was observed. The twinning structure is accompanied by a reent rant corner on the surface and induced the enhancement of growth rate, resulting in the formation of growth hillocks.