Stress-driven formation of InGaAs quantum dots on GaAs with sub-micron platinum pattern

We study the formation of self-assembled InGaAs quantum dots on GaAs substr ate with a sub-micron platinum stripe pattern. Islands or quantum dots pref erentially nucleate at the boundary of metal patterns. In addition, island density reduced region near the boundary of the metal pattern is found. Tho se results are attributed to the stress between metal stripe and GaAs surfa ce, which produces a laterally stressed region around the metal stripe. Ada toms on this region preferentially migrate toward the edge of metal stripes with maximum stress. This result may show a possible way for the interconn ection between randomly distributed self-assembled quantum dots and metal s tripes.