New self-organized growth method for InGaAs quantum dots on GaAs(001) using droplet epitaxy

Authors
Mano, T Watanabe, K Tsukamoto, S Fujioka, H Oshima, M Koguchi, N
Citation
T. Mano et al., New self-organized growth method for InGaAs quantum dots on GaAs(001) using droplet epitaxy, JPN J A P 2, 38(9AB), 1999, pp. L1009-L1011
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
38
Issue
9AB
Year of publication
1999
Pages
L1009 - L1011
Database
ISI
SICI code
Abstract
Quantum dot (QD) systems for InGaAs/GaAs without a wetting layer have been fabricated on GaAs (001) surfaces by a new self-organized growth method usi ng droplet epitaxy with highly dense Ga droplets. Droplets of InGa alloy wi th highly dense Ga droplets have been formed by supplying 1) Ga, 2) In and 3) Ga molecular beams, sequentially. These highly dense Ga droplets have su ccessfully prevented the two-dimensional growth of InGaAs during crystalliz ation under As Bur supply. In the plan-view transmission electron microscop e image, the InGaAs QDs with the density of 7 x 10(9) cm(-2) are observed. These QDs show a very sharp photoluminescence peak (full width half maximum (FWHM): 21.6 meV) at 946 nm.