T. Mano et al., New self-organized growth method for InGaAs quantum dots on GaAs(001) using droplet epitaxy, JPN J A P 2, 38(9AB), 1999, pp. L1009-L1011
Quantum dot (QD) systems for InGaAs/GaAs without a wetting layer have been
fabricated on GaAs (001) surfaces by a new self-organized growth method usi
ng droplet epitaxy with highly dense Ga droplets. Droplets of InGa alloy wi
th highly dense Ga droplets have been formed by supplying 1) Ga, 2) In and
3) Ga molecular beams, sequentially. These highly dense Ga droplets have su
ccessfully prevented the two-dimensional growth of InGaAs during crystalliz
ation under As Bur supply. In the plan-view transmission electron microscop
e image, the InGaAs QDs with the density of 7 x 10(9) cm(-2) are observed.
These QDs show a very sharp photoluminescence peak (full width half maximum
(FWHM): 21.6 meV) at 946 nm.