Overdamped NbN Josephson junctions based on Nb/AlOx/Nb trilayer technology

Authors
Iwai, T Aoyama, T Oke, R Akaike, H Fujimaki, A Hayakawa, H
Citation
T. Iwai et al., Overdamped NbN Josephson junctions based on Nb/AlOx/Nb trilayer technology, JPN J A P 2, 38(8B), 1999, pp. L929-L931
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
38
Issue
8B
Year of publication
1999
Pages
L929 - L931
Database
ISI
SICI code
Abstract
We have Fabricated overdamped NbN Josephson junctions based on Nb/AlOx/Nb t rilayer technology. The junctions have the structure of NbN/Nb/AlOx/Nb/NbN, where Nb/AlOx/Nb acts as a junction barrier. The overdamped junctions show ed a critical current density J(c) and characteristic voltage as high as 0. 44 kA/cm(2) and 160 mu V at 10 K, respectively. The junction characteristic s at 4.2 K were investigated from the viewpoint of their dependence on the film thickness of the Nb layers. The junction uniformity was also evaluated . The standard deviation, 1 - sigma, was 2.1% for a series of 64 5 x 5 mu m (2) junctions at 4.2 K.