Magnetoresistance of lightly doped TmBa2Cu3Ox crystals. Reorientation of the antiferromagnetic structure in a magnetic field

Authors
Amitin, EB Baikalov, AG Blinov, AG Boyarskii, LA Dikovskii, VY Zhdanov, KR Kameneva, MY Kozeeva, LP Shelkovnikov, AP
Citation
Eb. Amitin et al., Magnetoresistance of lightly doped TmBa2Cu3Ox crystals. Reorientation of the antiferromagnetic structure in a magnetic field, JETP LETTER, 70(5), 1999, pp. 352-357
Citations number
6
Categorie Soggetti
Physics
Journal title
JETP LETTERS
ISSN journal
00213640 → ACNP
Volume
70
Issue
5
Year of publication
1999
Pages
352 - 357
Database
ISI
SICI code
0021-3640(19990910)70:5<352:MOLDTC>2.0.ZU;2-9
Abstract
The magnetoresistance of lightly doped TmBa2Cu3Ox single crystals is invest igated in the temperature range 4.2-300 K for magnetic fields up to 12 T. F or the antiferromagnetic sample (x=6.3), when the current and field lie in the ab plane, the magnetoresistance is the sum of an anisotropic and a back ground component. The existence of the anisotropic component is attributed to the restructuring of the antiferromagnetic domain structure in a magneti c field. (C) 1999 American Institute of Physics. [S0021- 3640(99)00717-3].