Energy-dispersive anomalous X-ray scattering has been used for the determin
ation of the polarity of a noncentrosymmetric layer/substrate system. The m
ethod was applied to an epitaxically grown (Ga,In)P layer on a (001) GaAs s
ubstrate as an example to show its applicability as a routine procedure for
noncentrosymmetric thin-film systems. In the simplest case, four energy sp
ectra of various orders of the 111 reflections were sufficient to identify
polarity, without the need for intensity corrections.