Determination of polarity in noncentrosymmetric layer/substrate systems

Citation
Dc. Meyer et al., Determination of polarity in noncentrosymmetric layer/substrate systems, J APPL CRYS, 32, 1999, pp. 854-858
Citations number
16
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF APPLIED CRYSTALLOGRAPHY
ISSN journal
00218898 → ACNP
Volume
32
Year of publication
1999
Part
5
Pages
854 - 858
Database
ISI
SICI code
0021-8898(19991001)32:<854:DOPINL>2.0.ZU;2-P
Abstract
Energy-dispersive anomalous X-ray scattering has been used for the determin ation of the polarity of a noncentrosymmetric layer/substrate system. The m ethod was applied to an epitaxically grown (Ga,In)P layer on a (001) GaAs s ubstrate as an example to show its applicability as a routine procedure for noncentrosymmetric thin-film systems. In the simplest case, four energy sp ectra of various orders of the 111 reflections were sufficient to identify polarity, without the need for intensity corrections.