Localized destructive interference can be obtained for specific values of t
he angle of incidence when studying semiconductor superlattices with X-ray
reflectivity at fixed wavelength. Kinematical calculations show that the di
fference between the real parts of the refractive index of the layers must
be small, and that the number of superlattice periods must be optimized to
enhance the destructive interference. An experimental example, involving a
CdTe/CdZnTe superlattice, and optical matrix simulations for SiGe/Si superl
attices are presented to illustrate this effect. Finally, it is shown that
such structures can be tailored to act as energy filters at fixed angles of
incidence.