Creep of CdZnTe at high homologous temperatures

The creep behavior of single-crystal Zn-doped CdTe was examined in the smal l strain regime. Specimens from two different sources, with tensile axes [1 10] and [112], were deformed at 1073 and 1173 K. Strain rates were of order 10(-6) to 10(-7) s(-1). A laser interferometer was constructed to measure the small sample displacement. Cadmium overpressure was used to inhibit sub limation of test specimens at elevated temperatures. Some tests showed a tr ansition from secondary to tertiary creep at low levels of strain. An activ ation energy for steady-state creep was calculated as Q(C) = 1.46 eV, and t he creep exponent was found to be approximately rt = 4.2. These results, co upled with reported activation energies for self-diffusion of Cd in Cd(Zn)T e, indicate a dislocation creep mechanism. Etch pit density was measured be fore and after deformation and approached a common level regardless of init ial etch pit density.