Crystal structure and band-edge transitions of ReS2-xSex layered compounds

Citation
Ch. Ho et al., Crystal structure and band-edge transitions of ReS2-xSex layered compounds, J PHYS CH S, 60(11), 1999, pp. 1797-1804
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
ISSN journal
00223697 → ACNP
Volume
60
Issue
11
Year of publication
1999
Pages
1797 - 1804
Database
ISI
SICI code
0022-3697(199911)60:11<1797:CSABTO>2.0.ZU;2-2
Abstract
Single crystals of the ReS2-xSex solid solution series have been grown by t he chemical vapor transport method using Br-2 as a transport agent. From an alyzing the X-ray patterns, the series crystals are determined to be single -phase and crystallized in the triclinic layered structure. The lattice par ameters of the compound series are evaluated and discussed. The optical abs orption edge was measured on basal-plane at room temperature. The results r eveal that ReS2-xSex are indirect semiconductors and their energy gaps are determined. The band gap energy varies smoothly with the Se composition x, indicating that the nature of band edges are similar for the end members Re S2 and ReSe2, and the compounds of intermediate compositions. (C) 1999 Else vier Science Ltd. All rights reserved.