Defect physics of the CuInSe2 chalcopyrite semiconductor

The activation energies of acceptor E-A and donor levels E-D in the chalcop yrite compound CuInSe2 are calculated by using a simpler model based in the effective-mass theory for the case of single, double and triple point defe ct centers. Despite of the simplicity of this model, it is found that the v alues of E-A and E-D thus calculated for shallow and deep levels are in rea sonable agreement with those reported from the experimental data. In the ca se of not shallow donor levels values of E-D in good agreement with these d ata are calculated by using the free electron mass m(0) instead of the effe ctive electron mass. From the analysis of the results, most of these levels have been identified as due to the presence of several native point defect s. (C) 1999 Elsevier Science Ltd. All rights reserved.