Oxygen precipitation behavior in 300 mm polished Czochralski silicon wafers

The oxygen precipitation behavior in large diameter (300 mm) Czochralski si licon polished wafers with initial oxygen concentrations between 25-36 part s per million atomic and low carbon content, has been studied following two step heat-treatments (low-high annealing). It was found that an oxygen pre cipitation retardation and recovery phenomena occurred. Transmission electr on microscopy observations showed that extended defect formation is drastic ally changed from punched-out dislocations in precipitate retardation sampl es, to stacking faults in precipitation recovery samples. The precipitation retardation phenomenon is consistent with a previous model on smaller diam eter wafers; however, the current experimental results for 300 mm wafers in dicate platelet precipitate growth during the first low temperature anneali ng plays a key role in the oxygen precipitation recovery phenomenon. (C) 19 99 The Electrochemical Society. S0013-4651(99)01-095-2. All rights reserved .