Transfer of ultrathin silicon layers to polycrystalline SiC substrates forthe growth of 3C-SiC epitaxial films

A novel approach for the production of large area 3C-SiC substrates is desc ribed. Ultrathin (<20 nm) Si seed layers were transferred to high purity po lycrystalline 3C-SiC substrates through a unique wafer bonding process. The ultrathin Si seed layer was subsequently carbonized and used as the nuclea tion layer for high temperature (>1500 degrees C) growth of epitaxial 3C-Si C. The use of more optimal growth temperatures, not limited by the melting point of Si, led to 3C-SiC films of high crystalline quality. Double-crysta l X-ray diffraction measurements of the 3C-SiC(200) reflection gave peak wi dths of 660 arcsec. (C) 1999 The Electrochemical Society. S0013-4651(99)03- 072-4. All rights reserved.