A novel Si-B diffusion source for p(+)-poly-Si gate

Authors
Chao, TS Kuo, CP Chen, TP Lei, TF
Citation
Ts. Chao et al., A novel Si-B diffusion source for p(+)-poly-Si gate, J ELCHEM SO, 146(10), 1999, pp. 3852-3855
Citations number
8
Categorie Soggetti
Physical Chemistry/Chemical Physics","Material Science & Engineering
Journal title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
ISSN journal
00134651 → ACNP
Volume
146
Issue
10
Year of publication
1999
Pages
3852 - 3855
Database
ISI
SICI code
0013-4651(199910)146:10<3852:ANSDSF>2.0.ZU;2-1
Abstract
In this paper, we report a novel Si-B diffusion source for p(+)-polySi gate p-metal oxide-semiconductor field effect transistors (pMOSFETs). It is fou nd that boron penetration can br effectively suppressed using this process. All the electrical properties of the MOS capacitors are significantly impr oved over the conventional BF2+ or B+-implanted samples. This process is ve ry promising for fabrication of future surface-channel p-MOSFETs. (C) 1999 The Electrochemical Society. S0013-4651(99)03-017-7. All rights reserved.