Fabrication of microdiamond array and electrical characterization of individual diamond microcrystals based on scanning probe microscopy

Citation
H. Sugimura et al., Fabrication of microdiamond array and electrical characterization of individual diamond microcrystals based on scanning probe microscopy, J VAC SCI B, 17(5), 1999, pp. 1919-1922
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
17
Issue
5
Year of publication
1999
Pages
1919 - 1922
Database
ISI
SICI code
1071-1023(199909/10)17:5<1919:FOMAAE>2.0.ZU;2-S
Abstract
A microdiamond array, in which 2500 diamond microparticles 2 mu m in diamet er were precisely arranged in a mu m scale, was fabricated by site-selectiv e plasma chemical vapor deposition (CVD). Diamond was synthesized on a Pt s ubstrate covered with a SiO2 layer 0.2 mu m in thickness on which, using ph otolithographic processes, holes of 2x2 mu m(2) were fabricated in order to expose the Pt surface at the bottom of each hole. Diamond microparticles g rew selectively on these Pt sites based on the great difference between the nucleation densities of diamond on Pt and SiO2 surfaces. At the initial st age of this site-selective CVD, the diamond growth was confined in the hole , and accordingly, a plate-like shaped diamond microparticle was formed. Us ing an electrically conductive probe for atomic force microscopy, the elect rical conductivity of each plate-like diamond particle was measured while s imultaneously acquiring a topographic image of the particles. The diamond p article consisted of multiple grains and their conductivity was not homogen eous. The central regions of the grains were less conductive than their edg e regions. The grain boundaries were as nonconductive as the surrounding Si O2 region. (C) 1999 American Vacuum Society. [S0734-211X(99)00305-4].