Application of development-free vapor photolithography in silicon nitride etching

A new dry etching technique-development-free vapor photolithography-was use d to transfer a pattern onto silicon nitride film. Plasma-enhanced chemical vapor deposition silicon nitride film and thin low pressure chemical vapor deposition silicon nitride film can be etched to Set a positive pattern. T he difference in the etching rate between exposed and unexposed areas was a ttributed to the difference in the concentration of accelerators that was c ontrolled through a photochemical reaction. The reaction mechanism and othe r phenomena are discussed. (C) 1999 American Vacuum Society.