Deuterium sintering of silicon-on-insulator structures: D diffusion and replacement reactions at the SiO2/Si interface

We use dynamic secondary ion mass spectrometry (SIMS) to examine the mechan ism of H (D) incorporation into and retention within a buried SiO2 film at 625 degrees C. We find that diffusion of H-2(D-2) through the Si/SiO2/Si st ructure at this temperature is facile and that isotopic exchange occurs at the interfaces upon subsequent forming gas anneals at 625 degrees C. A deta iled examination of the isotopic exchange process indicates that the interf aces do not exhibit equivalent behavior. We also describe the artifacts obs erved in the SLMS profiles by comparing positive and negative secondary ion profiles. (C) 1999 American Vacuum Society.