Determination of silicon oxide layer thickness by time-of-flight secondaryion mass spectroscopy

Citation
O. Brox et al., Determination of silicon oxide layer thickness by time-of-flight secondaryion mass spectroscopy, J VAC SCI B, 17(5), 1999, pp. 2191-2192
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
17
Issue
5
Year of publication
1999
Pages
2191 - 2192
Database
ISI
SICI code
1071-1023(199909/10)17:5<2191:DOSOLT>2.0.ZU;2-Q