Integration methodology of chemical vapor deposition TiN, chemical vapor deposition W and W chemical mechanical planarization for sub-quarter micron process application

Citation
J. Wu et al., Integration methodology of chemical vapor deposition TiN, chemical vapor deposition W and W chemical mechanical planarization for sub-quarter micron process application, J VAC SCI B, 17(5), 1999, pp. 2300-2305
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
17
Issue
5
Year of publication
1999
Pages
2300 - 2305
Database
ISI
SICI code
1071-1023(199909/10)17:5<2300:IMOCVD>2.0.ZU;2-K
Abstract
Chemical vapor deposition (CVD) W plugs have been widely used for device me tallization with excellent conformity in small contacts/vias with high aspe ct ratio [J. E. J. Schmitz, Chemical Vapor Deposition of Tungsten and Tungs ten Silicides (Noyes, 1991)]. However, some unexpected plug fill such as pl ug loss and key hole exposing post tungsten chemical mechanical planarizati on (WCMP) still happened while going to smaller plug size and using metalor ganic chemical vapor deposition (MOCVD) TiN barrier. In this study, MOCVD T iN and CVD W fill followed by WCMP for plug metallization were investigated . Extensive analysis had been conducted on various types of defective W plu gs. Organic contaminants (hydrocarbon by-products) in MOCVD TiN deposition would prevent W deposition taking place inside the plug. For W wise, lower process temperature, carefully adjusted WF6/SiH4 and WF6/H-2 partial pressu re ratios had demonstrated better plug fill and electrical performance [T. E Clark et al., J. Vac. Sci. Technol. B 9, 1478 (1991)]. In the WCMP approa ch, the effects of different oxidizer concentration in slurry were characte rized. Eliminating the seam formation during the CVD W process can help avo id slurry attack in WCMP. The optimized integration scheme of MOCVD TiN bar rier, CVD W, and WCMP was successfully achieved and is applied on 0.20 mu m Logic production. (C) 1999 American Vacuum Society. [S0734-211X(99)05705-4 ].