Spin-on Cu films for ultralarge scale integrated metallization

We have developed the spin-on Cu metal (SOM) process to fill trenches and v ias down to 0.3 mu m. SOM is a liquid material that contains an organic sol vent and dispersed ultrafine particles as a source of Cu. This solution was applied to a Si wafer using a spin coater to form a film. Coated wafers we re baked at 623-673 K for 10 min in a reducing atmosphere. The end result i s a Cu film. Contrary to the conventional deposition techniques, the SOM pr ocess is simple but advantageous to its gap filling, planarization, and cos t consideration. (C) 1999 American Vacuum Society. [S0734-211X(99)05405-0].