Deposition temperature effects of high density plasma chemical vapor deposition films for subquarter micron devices application

Authors
Tsan, CC Wang, YL Wu, YL Dun, JW Huan, YS Feng, MS Chiu, SY
Citation
Cc. Tsan et al., Deposition temperature effects of high density plasma chemical vapor deposition films for subquarter micron devices application, J VAC SCI B, 17(5), 1999, pp. 2341-2344
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
17
Issue
5
Year of publication
1999
Pages
2341 - 2344
Database
ISI
SICI code
1071-1023(199909/10)17:5<2341:DTEOHD>2.0.ZU;2-G
Abstract
A detailed study for the high density plasma chemical vapor deposition (HDP -CVD) process was presented to prevent metal distortion issues and metal co rrosion risk. The deposition temperature increased and then saturated as th e film deposited, based on the correlation of wet-etch rate and deposition temperature. The stress of HDP-CVD film also trended up, but the deposition rate decreased. Lowering of the deposition temperature of HDP-CVD film was key to preventing the metal distortion. A two-step deposition recipe with 10 s Ar cooldown was developed to solve the metal distortion issue on subqu arter micron devices. (C) 1999 American Vacunm Society. [S0734-211X(99)0490 5-7].