Nondestructive technique for the characterization of deep traps at interlayer interfaces in thin-film multilayer semiconductor structures

Authors
Gonzalez-Hernandez, J Prokhorov, E Gorev, NB Kodzhespirova, IF Kovalenko, YA
Citation
J. Gonzalez-hernandez et al., Nondestructive technique for the characterization of deep traps at interlayer interfaces in thin-film multilayer semiconductor structures, J VAC SCI B, 17(5), 1999, pp. 2357-2360
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
17
Issue
5
Year of publication
1999
Pages
2357 - 2360
Database
ISI
SICI code
1071-1023(199909/10)17:5<2357:NTFTCO>2.0.ZU;2-R
Abstract
In this article we present a low-frequency capacitance-voltage technique fo r determining the effective concentration of vacant deep traps at the film- buffer layer interface in a thin-film GaAs structure. This effective concen tration is an index of the overall effect of vacant deep traps in both the buffer layer and substrate on the current transport in the film. The techni que can be used for quality control of film-buffer layer-substrate GaAs waf ers prior to device making. (C) 1999 American Vacuum Society. [S0734-211X(9 9)04405-4].