The plating bath temperature has a critical influence on the damascene gap
fill quality. Scanning electron microscopy studies indicated that over a sm
all temperature range from 20 to 30 degrees C defect-free electroplated Cu
fill was obtained. The effect was attributable to the initial nucleation an
d the chemistry of the plating bath, particularly the functionality of the
additives. Secondary ion mass spectroscopy analysis showed different impuri
ty levels of H, C, O, S, and Cl incorporated within the films. X-ray diffra
ction analysis on blanket Cu films indicated that, although all the Cu film
s had roughly the same (111) texture strength after plating, after a high t
emperature anneal at 450 degrees C for 30 min, the films deposited at highe
r temperatures exhibited much stronger (111) texture than the others. Howev
er, x-ray pole figure analysis of Cu lines with 0.35 mu m linewidth and 0.4
0 mu m spacing indicated roughly the same (111) texture intensity after the
anneal. The shortened transformation time and more tensile stress observed
on blanket Cu films plated at low temperatures were due to smaller grains
and less dense packing of deposits which were formed at low temperature pla
ting. Severe anisotropy of the stress was measured in 0.35 mu m Cu lines wh
ere the stress perpendicular to the trench and along the surface normal wer
e only about half of the stress parallel to the trench. This indicates the
existence of strong side wall interaction between Cu and the dielectrics. (
C) 1999 American Vacuum Society. [S0734-211X(99)04105-0].