Critical influence of plating bath temperature on Cu damascene electrodeposits

Citation
Qt. Jiang et al., Critical influence of plating bath temperature on Cu damascene electrodeposits, J VAC SCI B, 17(5), 1999, pp. 2361-2365
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
17
Issue
5
Year of publication
1999
Pages
2361 - 2365
Database
ISI
SICI code
1071-1023(199909/10)17:5<2361:CIOPBT>2.0.ZU;2-Q
Abstract
The plating bath temperature has a critical influence on the damascene gap fill quality. Scanning electron microscopy studies indicated that over a sm all temperature range from 20 to 30 degrees C defect-free electroplated Cu fill was obtained. The effect was attributable to the initial nucleation an d the chemistry of the plating bath, particularly the functionality of the additives. Secondary ion mass spectroscopy analysis showed different impuri ty levels of H, C, O, S, and Cl incorporated within the films. X-ray diffra ction analysis on blanket Cu films indicated that, although all the Cu film s had roughly the same (111) texture strength after plating, after a high t emperature anneal at 450 degrees C for 30 min, the films deposited at highe r temperatures exhibited much stronger (111) texture than the others. Howev er, x-ray pole figure analysis of Cu lines with 0.35 mu m linewidth and 0.4 0 mu m spacing indicated roughly the same (111) texture intensity after the anneal. The shortened transformation time and more tensile stress observed on blanket Cu films plated at low temperatures were due to smaller grains and less dense packing of deposits which were formed at low temperature pla ting. Severe anisotropy of the stress was measured in 0.35 mu m Cu lines wh ere the stress perpendicular to the trench and along the surface normal wer e only about half of the stress parallel to the trench. This indicates the existence of strong side wall interaction between Cu and the dielectrics. ( C) 1999 American Vacuum Society. [S0734-211X(99)04105-0].