Low-temperature thermal fixing of holograms in photorefractive La3Ga5SiO14: Pr3+ crystal

Authors
Nikolajsen, T Johansen, PM
Citation
T. Nikolajsen et Pm. Johansen, Low-temperature thermal fixing of holograms in photorefractive La3Ga5SiO14: Pr3+ crystal, OPTICS LETT, 24(20), 1999, pp. 1419-1421
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
OPTICS LETTERS
ISSN journal
01469592 → ACNP
Volume
24
Issue
20
Year of publication
1999
Pages
1419 - 1421
Database
ISI
SICI code
0146-9592(19991015)24:20<1419:LTFOHI>2.0.ZU;2-6
Abstract
Thermal fixing in a La3Ga5SiO14:Pr3+ photorefractive crystal is demonstrate d all the way down to room temperature. This, to our knowledge, is the firs t report: of such an effect in any photorefractive material. From the tempe rature dependence of the process the activation energy of the carriers invo lved in the fixing process is measured to be E-A = 0.89 eV. Further, an eff ective photorefractive charge density of (1.4 +/- 0.2) x 10(16) cm(-3) and Debye screening length of (6.8 +/- 0.7) x 10(-6) cm is measured. (C) 1999 O ptical Society of America OCIS codes: 210.4810, 190.5330, 160.5690.