Optical reflectivity of the Si(111)-(2x1) surface - The role of the electron-hole interaction

Citation
M. Rohlfing et Sg. Louie, Optical reflectivity of the Si(111)-(2x1) surface - The role of the electron-hole interaction, PHYS ST S-A, 175(1), 1999, pp. 17-22
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
175
Issue
1
Year of publication
1999
Pages
17 - 22
Database
ISI
SICI code
0031-8965(19990916)175:1<17:OROTSS>2.0.ZU;2-4
Abstract
We calculate the optical reflectivity of the Si(111)-(2 x 1) surface from f irst principles. To this end, we first calculate the quasiparticle band str ucture of the surface within the CW approximation for the electronic self e nergy. The band structure exhibits two surface bands inside the fundamental bulk band gap. Thereafter the electron-hole interaction is computed for tr ansitions between the relevant bands, the Bethe-Salpeter equation for coupl ed electron-hole excitations is solved and the optical response is evaluate d. In the energy range below the fundamental bulk band gap, the reflectivit y spectrum is dominated by a surface exciton at 0.43 eV with an excitonic b inding energy of 0.26 eV. Our calculated spectrum is in very good agreement with experimental data from differential reflectivity spectroscopy.