We report reflectance anisotropy spectroscopy (RAS) results for the control
led dosing of atomic hydrogen onto a clean 3 degrees offcut Si(001)-(1 x 2)
sample, cut so as to expose a single domain under ultra-high vacuum (UHV)
conditions. Upon dosing approximately 0.8 monolayers of atomic hydrogen ont
o this surface at room temperature, followed by annealing, large changes in
the RAS lineshape are observed. These are attributed to terrace disorder,
step roughening and to the formation of the monohydride Si(001)-(1 x 2)-H p
hase, respectively, with increased annealing temperature. However, a (1 x 2
) LEED pattern is observed throughout H adsorption and after annealing. We
compare the RAS spectrum for the monohydride phase with microscopic calcula
tions of the optical response and interesting agreement is found in the reg
ion of 3.2 eV.