Monohydride formation on vicinal Si(001) investigated by reflectance anisotropy spectroscopy

Citation
Jr. Power et al., Monohydride formation on vicinal Si(001) investigated by reflectance anisotropy spectroscopy, PHYS ST S-A, 175(1), 1999, pp. 63-69
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
175
Issue
1
Year of publication
1999
Pages
63 - 69
Database
ISI
SICI code
0031-8965(19990916)175:1<63:MFOVSI>2.0.ZU;2-I
Abstract
We report reflectance anisotropy spectroscopy (RAS) results for the control led dosing of atomic hydrogen onto a clean 3 degrees offcut Si(001)-(1 x 2) sample, cut so as to expose a single domain under ultra-high vacuum (UHV) conditions. Upon dosing approximately 0.8 monolayers of atomic hydrogen ont o this surface at room temperature, followed by annealing, large changes in the RAS lineshape are observed. These are attributed to terrace disorder, step roughening and to the formation of the monohydride Si(001)-(1 x 2)-H p hase, respectively, with increased annealing temperature. However, a (1 x 2 ) LEED pattern is observed throughout H adsorption and after annealing. We compare the RAS spectrum for the monohydride phase with microscopic calcula tions of the optical response and interesting agreement is found in the reg ion of 3.2 eV.