Infrared study of hydrogen in ultra-thin silicon nitride films using multiple internal reflection spectroscopy (MIR) in 200 mm silicon wafers

Authors
Olivier, M Martin, F Chabli, A Lefeuvre, G Conne, F Rochat, N
Citation
M. Olivier et al., Infrared study of hydrogen in ultra-thin silicon nitride films using multiple internal reflection spectroscopy (MIR) in 200 mm silicon wafers, PHYS ST S-A, 175(1), 1999, pp. 137-143
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
175
Issue
1
Year of publication
1999
Pages
137 - 143
Database
ISI
SICI code
0031-8965(19990916)175:1<137:ISOHIU>2.0.ZU;2-C
Abstract
We discuss the usefulness of the two-prism coupling geometry to perform non -destructive multiple internal reflection (MIR) measurements on 200 mm sili con wafers. Application to the determination of the Si-H and N-H bond conce ntrations in LPCVD SiN ultra-thin films, is presented. It is shown that an appropriate annealing reduces significantly the Si-H content.