A surface sensitive purely optical technique is demonstrated for the invest
igation of rapid dephasing processes of excited electronic surface states.
The combination of degenerate four-wave-mixing (DFWM) with second-harmonic
generation (SHG) can be employed to measure the diffracted second-harmonic
signal from a transient population grating of Si(111)7 x 7 dangling-bond st
ates. By this five-wave-mixing process, which is described by a chi((4))-te
nsor and is thus dipole-forbidden in bulk silicon, we deduce decoherence ti
mes of similar to 5 fs.