Spectroscopic studies of ZnSe crystals subjected to laser irradiation

An influence of power laser pulses of subthreshold intensity with hv < E-g On the defect structure, surface states and optical properties has been stu died in high-resistivity, undoped, cubic ZnSe single crystals with differen t degrees of purity. The laser-stimulated modification of the spectra of ph otoconductivity, photoluminescence, Raman scattering and optical absorption was due to laser-induced formation of intrinsic point defects of structure in the bulk as well as, particularly, in the surface layer of irradiated s amples. The role of laser-induced point defects in the revealed phenomenon of the laser photosensitization of ZnSe single crystals has been analyzed a nd the method for nondestructive determination of the ray-resistance thresh old of ZnSe-based optical components has been discussed.