Grand canonical equilibrium of two-dimensional electrons confined in asymmetric AlxGa1-xAs/GaAs heterostructures in a quantizing magnetic field

Citation
M. Kamal-saadi et al., Grand canonical equilibrium of two-dimensional electrons confined in asymmetric AlxGa1-xAs/GaAs heterostructures in a quantizing magnetic field, PHYS REV B, 60(11), 1999, pp. 7772-7775
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
11
Year of publication
1999
Pages
7772 - 7775
Database
ISI
SICI code
0163-1829(19990915)60:11<7772:GCEOTE>2.0.ZU;2-0
Abstract
The energy of electronic states of a two-dimensional electron gas (2DEG) co nfined in a one-sided n-doped A1(x)Ga(1-x)As/GaAs asymmetric quantum well ( QW) in a perpendicular magnetic field B is studied using low-temperature ph otoluminescence experiments. The interband Landau-level energies show an os cillatory B dependence. This oscillatory behavior does not depend on QW wid th and is sensitive to the carrier concentration N-s of the 2DEG. These obs ervations disagree with what one would expect from many-body theory. A theo retical model is developed assuming that, under continuous illumination, th e 2DEG is in grand canonical equilibrium with the rest of the structure. Th en, N-s may change from that at B = 0 because of the B dependence of the de nsity of states. In these semi-equilibrium conditions, the Fermi level shou ld stay flat across the structure and should not depend on B. This study sh ows that, in asymmetric modulation doped quantum wells, the electronic tran sfer can be the main factor in the oscillatory behavior of interband transi tion energies as a function of B.