Dephasing in InAs/GaAs quantum dots

Authors
Borri, P Langbein, W Mork, J Hvam, JM Heinrichsdorff, F Mao, MH Bimberg, D
Citation
P. Borri et al., Dephasing in InAs/GaAs quantum dots, PHYS REV B, 60(11), 1999, pp. 7784-7787
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
11
Year of publication
1999
Pages
7784 - 7787
Database
ISI
SICI code
0163-1829(19990915)60:11<7784:DIIQD>2.0.ZU;2-L
Abstract
The room-temperature dephasing in InAs/GaAs self-assembled quantum dots is measured using two independent methods: spectal-hole burning and four-wave mixing. Dephasing times weakly dependent on the excitation density are foun d, with a low density value of 290+/-80 fs from spectal-hole burning and of 260+/-20 fs from four-wave mixing.