Mn impurity in Ga1-xMnxAs epilayers

Citation
J. Szczytko et al., Mn impurity in Ga1-xMnxAs epilayers, PHYS REV B, 60(11), 1999, pp. 8304-8308
Citations number
56
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
11
Year of publication
1999
Pages
8304 - 8308
Database
ISI
SICI code
0163-1829(19990915)60:11<8304:MIIGE>2.0.ZU;2-K
Abstract
Electron paramagnetic resonance was measured in Ga1-xMnxAs/GaAs epilayers w ith 0.002 less than or equal to x less than or equal to 0.01. Data were tak en as a function of magnetic field orientation at low temperatures. The obs erved spectra were attributed to ionized Mn acceptor A(-). No neutral Mn ac ceptor centers were detected. The observed anisotropy of A(-) is interprete d in terms of sizable demagnetizing fields resulting from ferromagnetic cou pling between Mn ions. [S0163-1829(99)07235-5].