Thermoelectric and hot-electron properties of a silicon inversion layer (vol 56, pg 12422, 1997)

Authors
Fletcher, R Pudalov, VM Feng, Y Tsaousidou, M Butcher, PN
Citation
R. Fletcher et al., Thermoelectric and hot-electron properties of a silicon inversion layer (vol 56, pg 12422, 1997), PHYS REV B, 60(11), 1999, pp. 8392-8392
Citations number
1
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
11
Year of publication
1999
Pages
8392 - 8392
Database
ISI
SICI code
0163-1829(19990915)60:11<8392:TAHPOA>2.0.ZU;2-#