Influences of the mesa-sidewall effect on Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors

Authors
Chang, WL Pan, HJ Wang, WC Thei, KB Lour, WS Liu, WC
Citation
Wl. Chang et al., Influences of the mesa-sidewall effect on Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors, SEMIC SCI T, 14(10), 1999, pp. 887-891
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
14
Issue
10
Year of publication
1999
Pages
887 - 891
Database
ISI
SICI code
0268-1242(199910)14:10<887:IOTMEO>2.0.ZU;2-D
Abstract
The influences of the mesa-sidewall effect on de and RF performances of Ga0 .51In0.49P/In0.15Ga0.85As pseudomorphic high electron mobility transistors are studied and demonstrated. The leakage current path and parasitic capaci tance induced from mesa-sidewalls seriously affect the device characteristi cs, including the excessive gate leakage current, the reduced breakdown vol tage, the degraded RF current gain frequency and the increased sidegating e ffect.