Current pulses and high-frequency oscillations in a-Si/Si(p)/Si(n) heterojunction device

Authors
Dorosinets, VA Samuilov, VA Poklonski, NA Kyritsi, KG Anagnostopoulos, AN Bleris, GL Cenys, A
Citation
Va. Dorosinets et al., Current pulses and high-frequency oscillations in a-Si/Si(p)/Si(n) heterojunction device, SEMIC SCI T, 14(10), 1999, pp. 897-900
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
14
Issue
10
Year of publication
1999
Pages
897 - 900
Database
ISI
SICI code
0268-1242(199910)14:10<897:CPAHOI>2.0.ZU;2-I
Abstract
A three-terminal a-Si/Si(p)/Si(n) heterojunction device was found to genera te pulses of the collector current with a rise time of approximately 10(-7) s and a fall time of approximately 4 x 10(-7) s. The voltage applied to th e base (0.8-1.5 V) controlled the pulse repetition rate. When the voltage r eaches similar to 1.0 V, the pulses start to overlap, and the output signal is a high-frequency oscillation (10(6)-10(7) Hz) of the collector current. A simple mechanism explaining the pulse generation and the high-frequency o scillations has been proposed. It involves the extremely high recombination rate of the injected carriers in the thin a-Si layer of the a-Si/Si(p) int erface.