Oscillations of 2D electron density in GaAs/Ga0.67Al0.33As heterostructures in the QHE regime

Citation
A. Raymond et al., Oscillations of 2D electron density in GaAs/Ga0.67Al0.33As heterostructures in the QHE regime, SEMIC SCI T, 14(10), 1999, pp. 915-920
Citations number
45
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
14
Issue
10
Year of publication
1999
Pages
915 - 920
Database
ISI
SICI code
0268-1242(199910)14:10<915:OO2EDI>2.0.ZU;2-P
Abstract
Cyclotron resonance (CR) and quantum transport measurements are performed o n three GaAs/Ga0.67Al0.33As heterostructures in the quantum Hall regime at T = 2 K. The relaxation time and the 2D electron density N-s are determined fitting the CR transmission curves by the Drude-type model. In all samples the density N-s exhibits oscillations as a function of magnetic field. The de quantum transport is also studied on the same structures and, assuming that the Hall resistance determines the electron density at all fields, one obtains density oscillations similar to those measured by CR. This density behaviour is modelled using a reservoir hypothesis.