Pressure-induced formation of thermal donor centers in silicon after oxygen ion bombardment

This paper discusses the generation of thermal donor centers in silicon by oxygen ion implantation in the temperature range 350 to 550 degrees C. Thes e donors are distributed almost uniformly over the entire thickness of the silicon crystals and well outside the region of direct penetration of the i ons. It is established that implantation of Czochralski-grown silicon with oxygen ions followed by annealing accelerates the introduction of these don ors into the silicon, and that application of hydrostatic pressure further accelerates the process of donor-center formation. The data indicate that t his accelerated introduction of donors is associated with diffusion of radi ation-induced defects from the implanted layer into the crystal bulk, and t hat the diffusion coefficients of these defects are 1x10(-7) cm(2)/s or lar ger. (C) 1999 American Institute of Physics. [S1063-7826(99)00110-6].