Detection of paramagnetic recombination centers in proton-irradiated silicon

The method of spin-dependent recombination was used to record electron spin resonance (ESR) spectra of recombination centers in a thin (similar to 1 m u m) surface layer of p-type silicon grown by the Czochralski method and ir radiated by protons with energies of similar to 100 keV. Spectra of excited triplet states of the oxygen + vacancy complex (A-centers) were observed a long with complexes consisting of two carbon atoms and an interstitial sili con atom (C-S-Si-I-C-S complexes). The intensity of the ESR spectra of thes e radiation-induced defects was found to be largest at irradiation doses of similar to 10(13) cm(-2), and decreased with increasing dose, which is pro bably attributable to passivation of the radiation-induced defects by hydro gen. (C) 1999 American Institute of Physics. [S1063-7826(99)00310-5].