Luminescence properties of InAs layers and p-n structures grown by metallorganic chemical vapor deposition

The luminescence properties of p- and n-type InAs layers grown by gas-phase epitaxy from metallorganic compounds at atmospheric pressure are investiga ted. Acceptor levels in InAs are identified with energies 350, 372, 387, an d 397 meV. Optimal conditions are determined for the growth of InAs layers in a reactor of planetary type. At a growth temperature of 565 degrees C, I nAs structures were obtained with abrupt p-n junctions. The structures grow n were used to make light-emitting diodes operating at wavelengths of 3.1 m u m (T = 77 K) and 3.7 mu m (T = 300 K). (C) 1999 American Institute of Phy sics. [S1063-7826(99)00410-X].