Oxygen and Erbium related donor centers in Czochralski grown silicon implanted with erbium

The Hall effect measurements were conducted on Czochralski-grown silicon af ter implantation of erbium and two-step annealing at 700 degrees C and 900 degrees C. After the first step the formation of oxygen-related shallow don ors was observed at E-c in the range 20-40 meV and erbium-related donor cen ters at approximate to E-c-70 meV and approximate to E-c-120 meV. Along wit h the same oxygen-related shallow thermal donors and donor centers at appro ximate to E-c-70 meV, other donor centers at approximate to E-c-150 meV are formed following the 900 degrees C anneal, instead of those at approximate to E-c-120 meV. The new donor states are of particular interest because of their possible involvement in the photoluminescence process. The obtained results for erbium-implanted silicon are compared with some fragmentary DLT S data found in the current literature on the donors with ionization energi es less than 0.2 eV. (C) 1999 American Institute of Physics. [S1063-7826(99 )00910-2].